Monolithic Integration of CMOS XLSI and Carbon Nanotubes for Hybrid Nanotechnology Applications

被引:32
作者
Akinwande, Deji [1 ,2 ]
Yasuda, Shinichi [3 ]
Paul, Bipul [3 ]
Fujita, Shinobu [3 ]
Close, Gael [1 ,2 ]
Wong, H. -S. Philip [1 ,2 ]
机构
[1] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[3] Toshiba Co Ltd, Adv Large Scale Integrat Technol Lab, Kawasaki, Kanagawa 2128582, Japan
关键词
Analog circuits; carbon nanotubes (CNTs); cascode amplifier; monolithic integration;
D O I
10.1109/TNANO.2008.2003438
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We integrate carbon nanotube (CNT) fabrication with standard commercial CMOS very large scale integration on a single substrate suitable for emerging hybrid nanotechnology applications. This cointegration combines the inherent advantages of CMOS and CNTs. These emerging applications include CNT optical, biological, chemical, and gas sensors that require complex CMOS electronics for sensor control, calibration, and signal processing. We demonstrate the successful cointegration on a single chip with a vehicle circuit, a two-transistor cascode megahertz amplifier utilizing both silicon n-channel MOSFET and CNT transistors with a total power consumption of 62.5 mu W.
引用
收藏
页码:636 / 639
页数:4
相关论文
共 19 条
  • [1] Analysis of the frequency response of carbon nanotube transistors
    Akinwande, Deji
    Close, Gael E.
    Wong, H. -S. Philip
    [J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2006, 5 (05) : 599 - 605
  • [2] Sorting carbon nanotubes by electronic structure using density differentiation
    Arnold, Michael S.
    Green, Alexander A.
    Hulvat, James F.
    Stupp, Samuel I.
    Hersam, Mark C.
    [J]. NATURE NANOTECHNOLOGY, 2006, 1 (01) : 60 - 65
  • [3] Carbon-based electronics
    Avouris, Phaedon
    Chen, Zhihong
    Perebeinos, Vasili
    [J]. NATURE NANOTECHNOLOGY, 2007, 2 (10) : 605 - 615
  • [4] Hybridization of CMOS with CNT-Based nano-electromechanical switch for low leakage and robust circuit design
    Chakraborty, Raja Subhra
    Narasimhan, Seetharam
    Bhunia, Swarup
    [J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2007, 54 (11) : 2480 - 2488
  • [5] Multichannel carbon-nanotube FETs and complementary logic gates with nanowelded contacts
    Chen, Changxin
    Xu, Dong
    Kong, Eric Siu-Wai
    Zhang, Yafei
    [J]. IEEE ELECTRON DEVICE LETTERS, 2006, 27 (10) : 852 - 855
  • [6] Cho TS, 2007, IEEE CUST INTEGR CIR, P181
  • [7] Fabrication and characterization of carbon nanotube interconnects
    Close, Gael F.
    Wong, H. -S. Philip
    [J]. 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, : 203 - +
  • [8] DENG J, 2007, INT SOL STAT CIRC C, P70, DOI DOI 10.1109/ISSCC.2007.373592
  • [9] Unexpected scaling of the performance of carbon nanotube Schottky-barrier transistors
    Heinze, S
    Radosavljevic, M
    Tersoff, J
    Avouris, P
    [J]. PHYSICAL REVIEW B, 2003, 68 (23)
  • [10] Ballistic carbon nanotube field-effect transistors
    Javey, A
    Guo, J
    Wang, Q
    Lundstrom, M
    Dai, HJ
    [J]. NATURE, 2003, 424 (6949) : 654 - 657