Electron-induced surface reactivity modification in Zinc oxide-based thin films

被引:5
|
作者
Sabayev, V. [1 ]
Aronov, D. [1 ]
Oster, L. [2 ]
Rosenman, G. [1 ]
机构
[1] Tel Aviv Univ, Dept Phys Elect, Sch Elect Engn, Fac Engn, IL-69978 Tel Aviv, Israel
[2] Sami Shamoon Acad Coll Engn, IL-84100 Beer Sheva, Israel
关键词
D O I
10.1063/1.2988322
中图分类号
O59 [应用物理学];
学科分类号
摘要
Chemical surface reactivity is a key parameter in modern microelectronic and display technology that is defined by basic physical interactions at the liquid etcher/material surface interface. We apply recently developed low-energy electron irradiation method for surface modification of zinc oxide-based thin films affording to vary physical processes at the liquid agent/material surface interface/and widely tune its chemical reactivity. Electron irradiation leads to the formation of ultrathin layer on irradiated surface, without generation of volumetric defects, and preserves original optical and conductive properties. The method allows fabrication of high-resolution patterned templates with modified chemical etching resistance for the fabrication of three-dimensional patterned arrays. (C) 2008 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 50 条
  • [41] ELECTRON-INDUCED DISLOCATION DRAG IN THIN ALUMINUM PLATES
    LEBEDEV, VP
    KRYLOVSKII, VS
    FIZIKA TVERDOGO TELA, 1993, 35 (01): : 3 - 10
  • [42] An X-ray Photoelectron Spectroscopy Study of Ultraviolet Photoannealing-Induced Surface Transformations of Sol–Gel Derived Zinc Oxide-Based Films
    A. A. Karmanov
    I. A. Pronin
    N. D. Yakushova
    A. S. Komolov
    V. A. Moshnikov
    Inorganic Materials, 2022, 58 : 1145 - 1151
  • [43] Application of ultrasonic sprayed zirconium oxide dielectric in zinc tin oxide-based thin film transistor
    Oluwabi, Abayomi T.
    Katerski, Atanas
    Carlos, Emanuel
    Branquinho, Rita
    Mere, Arvo
    Krunks, Malle
    Fortunato, Elvira
    Pereira, Luis
    Acik, Ilona Oja
    JOURNAL OF MATERIALS CHEMISTRY C, 2020, 8 (11) : 3730 - 3739
  • [44] Effects of proton irradiation on indium zinc oxide-based thin-film transistors
    Moon, Yeon-Keon
    Lee, Sih
    Moon, Dae-Yong
    Kim, Woong-Sun
    Kang, Byung-Woo
    Park, Jong-Wan
    SURFACE & COATINGS TECHNOLOGY, 2010, 205 : S109 - S114
  • [45] Effective Contact Resistance of Zinc-Tin Oxide-Based Thin Film Transistors
    Kang, Youjin
    Han, Dongsuk
    Park, Jaehyung
    Shin, Sora
    Choi, Duckkyun
    Park, Jongwan
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2014, 14 (11) : 8148 - 8152
  • [46] A Numerical Study on the Mechanical Characteristics of Zinc Oxide-Based Transparent Thin Film Transistors
    Lee, D. -K.
    Park, K.
    Ahn, J. -H.
    Lee, N. -E.
    Kim, Y. -J.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 11 (07) : 5870 - 5875
  • [47] Highly conducting transparent thin films based on zinc oxide
    Wang, RP
    King, LLH
    Sleight, AW
    JOURNAL OF MATERIALS RESEARCH, 1996, 11 (07) : 1659 - 1664
  • [48] Highly conducting transparent thin films based on zinc oxide
    Oregon State Univ, Corvallis, United States
    J Mater Res, 7 (1659-1664):
  • [49] Zinc oxide-based diluted magnetic semiconductors
    Seshadri, Ram
    CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE, 2005, 9 (1-2): : 1 - 7
  • [50] Environmentally induced chemical and morphological heterogeneity of zinc oxide thin films
    Jiang, Hua
    Chou, Kang Wei
    Petrash, Stanislas
    Williams, Garth
    Thieme, Juergen
    Nykypanchuk, Dmytro
    Li, Li
    Muto, Atsushi
    Chen-Wiegart, Yu-chen Karen
    APPLIED PHYSICS LETTERS, 2016, 109 (09)