Electron-induced surface reactivity modification in Zinc oxide-based thin films

被引:5
|
作者
Sabayev, V. [1 ]
Aronov, D. [1 ]
Oster, L. [2 ]
Rosenman, G. [1 ]
机构
[1] Tel Aviv Univ, Dept Phys Elect, Sch Elect Engn, Fac Engn, IL-69978 Tel Aviv, Israel
[2] Sami Shamoon Acad Coll Engn, IL-84100 Beer Sheva, Israel
关键词
D O I
10.1063/1.2988322
中图分类号
O59 [应用物理学];
学科分类号
摘要
Chemical surface reactivity is a key parameter in modern microelectronic and display technology that is defined by basic physical interactions at the liquid etcher/material surface interface. We apply recently developed low-energy electron irradiation method for surface modification of zinc oxide-based thin films affording to vary physical processes at the liquid agent/material surface interface/and widely tune its chemical reactivity. Electron irradiation leads to the formation of ultrathin layer on irradiated surface, without generation of volumetric defects, and preserves original optical and conductive properties. The method allows fabrication of high-resolution patterned templates with modified chemical etching resistance for the fabrication of three-dimensional patterned arrays. (C) 2008 American Institute of Physics.
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页数:3
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