Fabrication issues of 4H-SiC Static Induction Transistors

被引：4

作者：

Stavrinidis, Antonis ^{[1
]}

Konstantinidis, George ^{[1
]}

Kayambaki, Maria ^{[1
]}

Cayrel, Frederic ^{[2
]}

Alquier, Daniel ^{[2
]}

Gao, Zhuo ^{[3
]}

Zekentes, Konstantinos ^{[1
]}

机构：

[1] MRG IESL FORTH, POB 1385, Iraklion, Greece

[2] LMP, Tours 37071, France

[3] Polytech Tours 7, Tours 37200, France

来源：

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷

关键词：

Static-Induction-Transistors; ohmic contact; Al-outdiffusion; self-aligned photolithography;

D O I：

10.4028/www.scientific.net/MSF.717-720.1049

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The process technology for the fabrication of 4H-SiC Static Induction Transistors (SITs) has been developed. Conventional contact UV lithography and self-aligned techniques have been employed. Al-outdiffusion following Rapid Thermal Annealing (RTA) has been determined as the cause for the increased reverse leakage and early forward turn-on of the gate-source junction. The transistors, exhibited a specific R-ON value in the order of 2m Omega.cm(2) and 80 V turn-off voltage.

引用

页码：1049 / +

页数：2

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