Characterization of thin Gd2O3 magnetron sputtered layers

被引：2

作者：

Gryglewicz, Jacek ^{[1
]}

Firek, Piotr ^{[2
]}

Jasinski, Jakub ^{[2
]}

Mroczynski, Robert ^{[2
]}

Szmidt, Jan ^{[2
]}

机构：

[1] Wroclaw Univ Technol, Janiszewskiego 11-17, PL-50372 Wroclaw, Poland

[2] Warsaw Univ Technol, Inst Microelect & Optoelect, PL-00662 Warsaw, Poland

来源：

ELECTRON TECHNOLOGY CONFERENCE 2013 | 2013年 / 8902卷

关键词：

magnetron sputtering; Gd2O3; KAPPA GATE DIELECTRICS; FILMS;

D O I：

10.1117/12.2031230

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Reactive magnetron sputtering technique using O-2/Ar gas mixture was used to deposit Gd2O3 layers. Following metallization process of Al allowed to create MIS structures, which electrical parameters (kappa, D-it, U-FB, rho, etc.) were measured using high frequency C-V equipment. Created layers exhibit high permittivity (kappa approximate to 12) at 100kHz. I-V measurements point out on maximum electric break down field E-br approximate to 0.4 MV/cm and maximum break down voltage U-br approximate to 16V. Layers were morphologically tested using AFM technique (R-alpha approximate to 0.5 divided by 2nm). Layer thicknesses as well as refractive indexes (RI approximate to 1.50 divided by 2.05) were estimated using ellipsometry measurements.

引用

页数：7

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