Impedance spectroscopy of V2O5-Bi2O3-BaTiO3 glass-ceramics

被引:29
作者
Al-syadi, Aref M. [1 ,2 ]
Yousef, El Sayed [1 ,3 ]
El-Desoky, M. M. [1 ,4 ]
Al-Assiri, M. S. [1 ,5 ]
机构
[1] King Khalid Univ, Fac Sci, Dept Phys, Abha, Saudi Arabia
[2] Ibb Univ, Fac Educ AL Nadirah, Dept Phys, Ibb, Yemen
[3] Al Azhar Univ, Fac Sci, Dept Phys, Assiut Branch, Assiut, Egypt
[4] Suez Univ, Dept Phys, Fac Sci, Suez, Egypt
[5] Najran Univ, Coll Arts & Sci, Dept Phys, Najran, Saudi Arabia
关键词
Vanadate glasses; Dielectric properties; Activation energy; DIELECTRIC-PROPERTIES; ELECTRICAL-PROPERTIES; CONDUCTIVITY; MICROSTRUCTURE;
D O I
10.1016/j.solidstatesciences.2013.10.002
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
The glasses within composition as: (80 x)V2O5/20Bi(2)O(3)/xBaTiO(3) with x = 2.5, 5, 7.5 and 10 mol% have been prepared. The glass transition (T-g) increases with increasing BaTiO3 content. Synthesized glasses ceramic containing BaTi4O9, Ba3TiV4O15 nanoparticles of the order of 25-35 nm and 30-46 nm, respectively were estimated using XRD. The dielectric properties over wide ranges of frequencies and temperatures were investigated as a function of BaTiO3 content by impedance spectroscopy measurements. The hopping frequency, omega(h), dielectric constant, epsilon', activation energies for the DC conduction, Ea, the relaxation process, E-c, and stretched exponential parameter beta of the glasses samples have been estimated. The, omega(h), beta, decrease from 51.63 to 0.31 x 10(6) (s(-1)), 0.84 to 0.79 with increasing BaTiO3 respectively. Otherwise, the E-sigma, increase from 0.279 to 0.306 eV with increasing BaTiO3. The value of dielectric constant equal 9.5 . 10(3) for the 2.5BaTiO(3)/77.5V(2)O(5)/20Bi(2)O(3) glasses-ceramic at 330 K for 1 KHz which is ten times larger than that of same glasses composition. Finally the relaxation properties of the investigated glasses are presented in the electric modulus formalism, where the relaxation time and the respective activation energy were determined. Published by Elsevier Masson SAS.
引用
收藏
页码:72 / 82
页数:11
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