Growth and Optimization of 2-μm InGaSb/AlGaSb Quantum-Well-Based VECSELs on GaAs/AlGaAs DBRs

被引：5

作者：

Ahirwar, Pankaj ^{[1
]}

Rotter, Thomas J. ^{[1
]}

Shima, Darryl ^{[1
]}

Jahan, Nahid A. ^{[3
]}

Clark, Stephen P. R. ^{[1
]}

Addamane, Sadhvikas J. ^{[1
]}

Balakrishnan, Ganesh ^{[1
]}

Laurain, Alexandre ^{[2
]}

Hader, Joerg ^{[2
]}

Lai, Yi-Ying ^{[2
]}

Moloney, Jerome V. ^{[2
]}

Suemune, Ikuo ^{[3
]}

Bedford, Robert G. ^{[4
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

[2] Univ Arizona, Coll Opt Sci, Tucson, AZ 85721 USA

[3] Hokkaido Univ, Res Inst Elect Sci, Sapporo, Hokkaido 0010021, Japan

[4] Air Force Res Lab, Wright Patterson AFB, OH 45433 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2013年 / 19卷 / 04期

基金：

美国国家科学基金会;

关键词：

Semiconductor lasers; surface-emitting lasers; quantum-well lasers; EMITTING SEMICONDUCTOR-LASERS; MOLECULAR-BEAM EPITAXY; MU-M; GASB; GAAS; SUBSTRATE; ARRAYS;

D O I：

10.1109/JSTQE.2013.2239615

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the growth of optically pumped vertical-external-cavity surface-emitting lasers (VECSELs) based on InGaSb/AlGaSb quantum wells grown on GaAs/AlGaAs distributed Bragg reflectors (DBRs). The 7.78% lattice mismatch between GaSb and GaAs is accommodated by an array of 90 degrees misfit dislocations at the interface. This results in spontaneous relaxation of the GaSb epilayer and also significantly reduces the threading dislocation density. The VECSELs are operated in both pulsed (with 340-W peak output power) and continuous wave mode (with 0.12-W peak output power). We investigate the effects of the GaSb/GaAs interface by comparing the lattice mismatched III-Sb VECSEL grown on GaAs/AlGaAs DBRs to a lattice matched III-Sb VECSEL grown on GaSb/AlAsSb DBRs. The lattice matched VECSEL outperforms the lattice mismatched VECSEL in terms of threshold pump density, efficiency, and maximum continuous-wave output power. This can be attributed to the presence of threading dislocations throughout the active region of the mismatched VECSEL, which is confirmed by cross-sectional transmission electron microscopy. The optical properties of the III-Sb active regions are characterized by time-resolved photoluminescence, which can be used to optimize the IMF interface.

引用

页数：11

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