Photoluminescence enhancement in porous SiC passivated by atomic layer deposited Al2O3 films

被引：0
|
作者：
Lu, Weifang [1 ]
Iwasa, Yoshimi [2 ]
Ou, Yiyu [1 ]
Kamiyama, Satoshi [2 ]
Petersen, Paul Michael [1 ]
Ou, Haiyan [1 ]
机构：
[1] Tech Univ Denmark, Dept Photon Engn, DK-2800 Lyngby, Denmark
[2] Meijo Univ, Dept Mat Sci & Engn, Tenpaku Ku, 1-501 Shiogamaguchi, Nagoya, Aichi 4688502, Japan
来源：
2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2016年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved.
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页数：2
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