Ion beam analysis of SiCx thin films using a deuterium beam

被引：2

作者：

Andrade, E

Mahmood, A

Muhl, S

Zavala, EP

Pineda, JC

Huerta, L

机构：

[1] Univ Nacl Autonoma Mexico, Inst Fis, Mexico City 01000, DF, Mexico

[2] Natl Autonomous Univ Mexico, Inst Invest Mat, Mexico City 04510, DF, Mexico

来源：

SURFACE & COATINGS TECHNOLOGY | 2002年 / 153卷 / 2-3期

关键词：

silicon carbide; thin film RF; RBS; NRA; characterisation films;

D O I：

10.1016/S0257-8972(01)01689-9

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

SiCx thin films have been prepared using RF reactive magnetron sputtering. The deposition parameters were varied over a wide range to optimise the quality of the films. The film atomic density per unit area (atoms/cm(2)) and composition were obtained by NRA and RBS techniques by bombarding the samples with a low energy deuterium beam. The films were also characterised by X-ray diffraction, FTIR spectroscopy, profilometry and ellipsometry to supplement the RBS and NRA results. (C) 2002 Elsevier Science B.V All rights reserved.

引用

页码：119 / 124

页数：6

共 14 条

[1]

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[2]

*CRC, 1996, CRC HDB CHEM PHYS

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