Enhanced infrared detectors using resonant structures combined with thin type-II superlattice absorbers

被引:53
作者
Goldflam, M. D. [1 ]
Kadlec, E. A. [1 ]
Olson, B. V. [1 ]
Klem, J. F. [1 ]
Hawkins, S. D. [1 ]
Parameswaran, S. [1 ]
Coon, W. T. [1 ]
Keeler, G. A. [1 ]
Fortune, T. R. [1 ]
Tauke-Pedretti, A. [1 ]
Wendt, J. R. [1 ]
Shaner, E. A. [1 ]
Davids, P. S. [1 ]
Kim, J. K. [1 ]
Peters, D. W. [1 ]
机构
[1] Sandia Natl Labs, POB 5800, Albuquerque, NM 87185 USA
关键词
Efficiency - Infrared radiation - Nanoantennas - Fabry-Perot interferometers - Electromagnetic simulation;
D O I
10.1063/1.4972844
中图分类号
O59 [应用物理学];
学科分类号
摘要
We examined the spectral responsivity of a 1.77 mu m thick type-II superlattice based long-wave infrared detector in combination with metallic nanoantennas. Coupling between the Fabry-Perot cavity formed by the semiconductor layer and the resonant nanoantennas on its surface enables spectral selectivity, while also increasing peak quantum efficiency to over 50%. Electromagnetic simulations reveal that this high responsivity is a direct result of field-enhancement in the absorber layer, enabling significant absorption in spite of the absorber's subwavelength thickness. Notably, thinning of the absorbing material could ultimately yield lower photodetector noise through a reduction in dark current while improving photocarrier collection efficiency. The temperature-and incident-angle-independent spectral response observed in these devices allows for operation over a wide range of temperatures and optical systems. This detector paradigm demonstrates potential benefits to device performance with applications throughout the infrared. Published by AIP Publishing.
引用
收藏
页数:5
相关论文
共 35 条
[11]   Strained and Unstrained Layer Superlattices for Infrared Detection [J].
Grein, C. H. ;
Garland, J. ;
Flatte, M. E. .
JOURNAL OF ELECTRONIC MATERIALS, 2009, 38 (08) :1800-1804
[12]   MINORITY-CARRIER LIFETIMES IN IDEAL INGASB/INAS SUPERLATTICES [J].
GREIN, CH ;
YOUNG, PM ;
EHRENREICH, H .
APPLIED PHYSICS LETTERS, 1992, 61 (24) :2905-2907
[13]   Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes [J].
Grein, CH ;
Young, PM ;
Flatte, ME ;
Ehrenreich, H .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (12) :7143-7152
[14]   Minority carrier lifetimes in very long-wave infrared InAs/GaInSb superlattices [J].
Haugan, Heather J. ;
Brown, Gail J. ;
Olson, Benjamin V. ;
Kadlec, Emil A. ;
Kim, Jin K. ;
Shaner, Eric A. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 34 (02)
[15]   Minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices: Photon recycling and the role of radiative and Shockley-Read-Hall recombination mechanisms [J].
Hoeglund, L. ;
Ting, D. Z. ;
Soibel, A. ;
Fisher, A. ;
Khoshakhlagh, A. ;
Hill, C. J. ;
Keo, S. ;
Gunapala, S. D. .
APPLIED PHYSICS LETTERS, 2014, 105 (19)
[16]   Influence of radiative and non-radiative recombination on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices [J].
Hoeglund, L. ;
Ting, D. Z. ;
Khoshakhlagh, A. ;
Soibel, A. ;
Hill, C. J. ;
Fisher, A. ;
Keo, S. ;
Gunapala, S. D. .
APPLIED PHYSICS LETTERS, 2013, 103 (22)
[17]   Fundamental physics of infrared detector materials [J].
Kinch, MA .
JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (06) :809-817
[18]   Improved performance of HgCdTe infrared detector focal plane arrays by modulating light field based on photonic crystal structure [J].
Liang, Jian ;
Hu, Weida ;
Ye, Zhenhua ;
Liao, Lei ;
Li, Zhifeng ;
Chen, Xiaoshuang ;
Lu, Wei .
JOURNAL OF APPLIED PHYSICS, 2014, 115 (18)
[19]   Detailed study of above bandgap optical absorption in HgCdTe [J].
Moazzami, K ;
Phillips, J ;
Lee, D ;
Krishnamurthy, S ;
Benoit, G ;
Fink, Y ;
Tiwald, T .
JOURNAL OF ELECTRONIC MATERIALS, 2005, 34 (06) :773-778
[20]   Resonant Plasmonic and Vibrational Coupling in a Tailored Nanoantenna for Infrared Detection [J].
Neubrech, Frank ;
Pucci, Annemarie ;
Cornelius, Thomas Walter ;
Karim, Shafqat ;
Garcia-Etxarri, Aitzol ;
Aizpurua, Javier .
PHYSICAL REVIEW LETTERS, 2008, 101 (15)