Thermal storage effects on AlGaN/GaN HEMT

被引：12

作者：

Danesin, Francesca ^{[1
]}

Tazzoli, Augusto ^{[1
]}

Zanon, Franco ^{[1
]}

Meneghesso, Gaudenzio ^{[1
]}

Zanoni, Enrico ^{[1
]}

Cetronio, Antonio ^{[2
]}

Lanzied, Claudio ^{[2
]}

Lavanga, Simone ^{[2
]}

Peroni, Marco ^{[2
]}

Romanini, Paolo ^{[2
]}

机构：

[1] Univ Padua, Dept Informat Engn, I-35100 Padua, Italy

[2] GaAs Foundry, Selex Sistemi Integrati, I-00131 Rome, Italy

来源：

MICROELECTRONICS RELIABILITY | 2008年 / 48卷 / 8-9期

关键词：

Silicon carbide - Gallium nitride - Aluminum gallium nitride - High electron mobility transistors - III-V semiconductors - Drain current;

D O I：

10.1016/j.microrel.2008.07.008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of thermal storage on GaN-HEMT devices grown on Sic Substrate have been investigated by DC and Pulsed electrical measurements, breakdown measurements (by means of a Transmission Line Pulser, TLP), and optical and electron microscopy. After 3000 h of thermal storage testing at 300 degrees C, only a limited reduction of the DC drain saturation Current and of the transconductance peak was observed (20% and 25% decrease, respectively). However, pulsed measurements on aged devices clearly highlight a dramatic Current collapse effect that has been attributed to a creation of surface traps in the gate-to-drain and gate-to-source access region. On-state breakdown characterization carried out on aged devices did not highlight any noticeable changes with respect to the untreated devices similarly to the DC characterization. Failure analyses have demonstrated that a loss of adhesion of the passivation layer was responsible for the observed trap formation. An improved passivation deposition process was therefore developed, including a Surface cleaning procedure aimed at preventing passivation detaching. The devices fabricated using this new procedure do not show any enhancement of trapping effects up to 500 h of thermal stress at 300 degrees C. (C) 2008 Published by Elsevier Ltd.

引用

页码：1361 / 1365

页数：5

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