Electric field-tunable BaxSr1-xTiO3 films with high figures of merit grown by molecular beam epitaxy

被引：39
作者：
Mikheev, Evgeny [1 ]
Kajdos, Adam P. [1 ]
Hauser, Adam J. [1 ]
Stemmer, Susanne [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 25期
关键词：
FERROELECTRIC THIN-FILMS; DIELECTRIC-PROPERTIES; MICROWAVE APPLICATIONS; SINGLE-CRYSTALS; SRTIO3; FILMS; DEVICES; DEPENDENCE; RF;
D O I：
10.1063/1.4773034
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the dielectric properties of BaxSr1-xTiO3 (BST) films grown by molecular beam epitaxy on epitaxial Pt bottom electrodes. Paraelectric films (x <= 0.5) exhibit dielectric losses that are similar to those of BST single crystals and ceramics. Films with device quality factors greater than 1000 and electric field tunabilities exceeding 1: 5 are demonstrated. The results provide evidence for the importance of stoichiometry control and the use of a non-energetic deposition technique for achieving high figures of merit of tunable devices with BST thin films. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773034]
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页数：4
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