Film bulk acoustic resonator pressure sensor with self temperature reference

被引:40
作者
He, X. L. [1 ,2 ]
Garcia-Gancedo, L. [3 ]
Jin, P. C. [1 ,2 ]
Zhou, J. [1 ,2 ]
Wang, W. B. [1 ,2 ]
Dong, S. R. [1 ,2 ]
Luo, J. K. [1 ,2 ,4 ]
Flewitt, A. J. [3 ]
Milne, W. I. [3 ]
机构
[1] Zhejiang Univ, Dept Informat Sci & Elect Engn, Hangzhou 310027, Zhejiang, Peoples R China
[2] Cyrus Tang Ctr Sensor Mat & Applicat, Hangzhou 310027, Zhejiang, Peoples R China
[3] Univ Cambridge, Elect Engn Div, Cambridge CB3 0FA, England
[4] Bolton Univ, Inst Renewable Energy & Environm Technol, Bolton BL3 5AB, England
基金
英国工程与自然科学研究理事会;
关键词
WAVE PRESSURE; FBAR; ZNO;
D O I
10.1088/0960-1317/22/12/125005
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel film bulk acoustic resonator (FBAR) with two resonant frequencies which have opposite reactions to temperature changes has been designed. The two resonant modes respond differently to changes in temperature and pressure, with the frequency shift being linearly correlated with temperature and pressure changes. By utilizing the FBAR's sealed back trench as a cavity, an on-chip single FBAR sensor suitable for measuring pressure and temperature simultaneously is proposed and demonstrated. The experimental results show that the pressure coefficient of frequency for the lower frequency peak of the FBAR sensors is approximately -17.4 ppm kPa(-1), while that for the second peak is approximately -6.1 ppm kPa(-1), both of them being much more sensitive than other existing pressure sensors. This dual mode on-chip pressure sensor is simple in structure and operation, can be fabricated at very low cost, and yet requires no specific package, therefore has great potential for applications.
引用
收藏
页数:6
相关论文
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