Characterization of silicon nitride films prepared by MW-ECR magnetron sputtering

被引：13

作者：

Ding, WY ^{[1
]}

Xu, J ^{[1
]}

Li, YQ ^{[1
]}

Piao, Y ^{[1
]}

Gao, P ^{[1
]}

Deng, XL ^{[1
]}

Dong, C ^{[1
]}

机构：

[1] Dalian Univ Technol, State Key Lab Mat Modificat Laser Ion & Electron, Dalian 116024, Peoples R China

来源：

ACTA PHYSICA SINICA | 2006年 / 55卷 / 03期

关键词：

silicon nitride; WM-ECR plasma; sputtering; FT-IR; XPS;

D O I：

10.7498/aps.55.1363

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Hydrogen-free silicon nitride films were deposited at room temperature by microwave electron cyclotron resonance (ECR) plasma source enhanced unbalanced magnetron sputtering system. Fourier-transform infrared spectroscopy and X-ray photoelectron spectroscopy were used to study the bond type, the change of bond structures, and the stoichiometry of the silicon nitride films. Atomic-force microscopy and nano-indentation were used to study the morphological features and mechanical characteristics of the films. The results indicate that the structure and characteristics of the films deposited by this technique depend strongly on the density of sputtered Si in plasma and the films deposited at 4 seem N-2 flow show excellent stoichiometry and properties.

引用

页码：1363 / 1368

页数：6

共 23 条

[1] CONFIGURATIONAL STATISTICS IN A-SIXNYHZ ALLOYS - A QUANTITATIVE BONDING ANALYSIS [J].

BUSTARRET, E ;

BENSOUDA, M ;

HABRARD, MC ;

BRUYERE, JC ;

POULIN, S ;

GUJRATHI, SC .

PHYSICAL REVIEW B, 1988, 38 (12) :8171-8184

[2] Surface micromachining for microelectromechanical systems [J].

Bustillo, JM ;

Howe, RT ;

Muller, RS .

PROCEEDINGS OF THE IEEE, 1998, 86 (08) :1552-1574

[3]

CHEN JF, 1999, ACTA PHYS SINICA, V48, P1310

[4]

Ding WY, 2005, CHINESE PHYS LETT, V22, P2332, DOI 10.1088/0256-307X/22/9/053

[5] Micromachined pressure sensors: Review and recent developments [J].

Eaton, WP ;

Smith, JH .

SMART MATERIALS AND STRUCTURES, 1997, 6 (05) :530-539

[6]

FRENCH PJ, 1997, SENSOR ACTUAT A-PHYS, V149, P58

[7]

Li X, 2003, CHINESE PHYS LETT, V20, P692, DOI 10.1088/0256-307X/20/5/329

[8]

LU Z, 2001, J VAC SCI TECHNOL A, V19, P1336

[9]

MOROSANU CE, 1980, THIN SOLID FILMS, V171, P65

[10]

MOULDER JF, 1995, HDB XRAY PHOTOELECTR, P57

← 1 2 3 →