Influence of acoustic phonon confinement on electron mobility in ultrathin silicon on insulator layers

被引：30

作者：

Donetti, L ^{[1
]}

Gámiz, F ^{[1
]}

Rodriguez, N ^{[1
]}

Jimenez, F ^{[1
]}

Sampedro, C ^{[1
]}

机构：

[1] Univ Granada, Dept Elect & Tecnol Comp, E-18071 Granada, Spain

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 12期

关键词：

D O I：

10.1063/1.2187952

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show the importance of acoustic phonon confinement in ultrathin silicon-on-insulator inversion layers by comparing electron mobility calculated by the Monte Carlo method assuming a bulk acoustic phonon model (the usual procedure) with that obtained by using a confined acoustic phonon model developed in this work. Both freestanding and rigid boundary conditions are taken into account for the evaluation of the confined phonon dispersion in a three-layer structure. Mobility reductions of 30% are observed for silicon thicknesses of around 5-10 nm when the confined acoustic phonon model is used.

引用

收藏

页数：3

相关论文

共 12 条

[1] Phonon-boundary scattering in thin silicon layers [J].

Asheghi, M ;

Leung, YK ;

Wong, SS ;

Goodson, KE .

APPLIED PHYSICS LETTERS, 1997, 71 (13) :1798-1800

[2] ELECTRON RELAXATION-TIMES DUE TO THE DEFORMATION-POTENTIAL INTERACTION OF ELECTRONS WITH CONFINED ACOUSTIC PHONONS IN A FREESTANDING QUANTUM-WELL [J].

BANNOV, N ;

ARISTOV, V ;

MITIN, V ;

STROSCIO, MA .

PHYSICAL REVIEW B, 1995, 51 (15) :9930-9942

[3] CONFINED ACOUSTIC PHONONS IN A FREESTANDING QUANTUM-WELL AND THEIR INTERACTION WITH ELECTRONS [J].

BANNOV, N ;

MITIN, V ;

STROSCIO, M .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1994, 183 (01) :131-142

[4] Frontiers of silicon-on-insulator [J].

Celler, GK ;

Cristoloveanu, S .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (09) :4955-4978

[5] Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers [J].

Gámiz, F ;

Roldán, JB ;

Cartujo-Cassinello, P ;

Carceller, JE ;

López-Villanueva, JA ;

Rodriguez, S .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (11) :6269-6275

[6] Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion [J].

Gamiz, F ;

Fischetti, MV .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (10) :5478-5487

[7] Relaxation of a two-dimensional electron gas in semiconductor thin films at low temperatures: Role of acoustic phonon confinement [J].

Glavin, BA ;

Pipa, VI ;

Mitin, VV ;

Stroscio, MA .

PHYSICAL REVIEW B, 2002, 65 (20) :2053151-20531514

[8] An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation [J].

Palestri, P ;

Eminente, S ;

Esseni, D ;

Fiegna, C ;

Sangiorgi, E ;

Selmi, L .

SOLID-STATE ELECTRONICS, 2005, 49 (05) :727-732

[9] Phonon spectrum and group velocities in AlN/GaN/AlN and related heterostructures [J].

Pokatilov, EP ;

Nika, DL ;

Balandin, AA .

SUPERLATTICES AND MICROSTRUCTURES, 2003, 33 (03) :155-171

[10] Intervalley-scattering-induced electron-phonon energy relaxation in many-valley semiconductors at low temperatures -: art. no. 206602 [J].

Prunnila, M ;

Kivinen, P ;

Savin, A ;

Törmä, P ;

Ahopelto, J .

PHYSICAL REVIEW LETTERS, 2005, 95 (20)