Trench DMOS interface trap characterization by three-terminal charge pumping measurement

被引：2

作者：

Izuddin, I. ^{[1
]}

Kamaruddin, M. H. ^{[2
]}

Nordin, A. N. ^{[1
]}

Soin, N. ^{[3
]}

机构：

[1] Int Islamic Univ Malaysia, Kuala Lumpur 53100, Malaysia

[2] Infineon Technol Kulim Sdn Bhd, Kulim 09000, Kedah, Malaysia

[3] Univ Malaya, Dept Elect Engn, Kuala Lumpur 50603, Malaysia

来源：

MICROELECTRONICS RELIABILITY | 2012年 / 52卷 / 12期

关键词：

OXIDE; TRANSISTORS;

D O I：

10.1016/j.microrel.2012.06.118

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The applicability of three-terminal charge pumping (3T-CP) technique to characterize the gate-oxide/Silicon (SiO2/Si) interface in a 45 nm thick SiO2, n-type trench Double-diffused Metal-Oxide-Semiconductor (DMOS) technology transistors is studied. The charge pumping current for process control monitor kerf (PCM-Kerf) structures were successfully measured during experiments. The plot shapes and trends are in agreement with previously reported work. A correlation study was performed with the numerical value of charge pumping current and experimental results on PCM-Kerf for a planar DMOS with 4 terminals. The charge pumping measurements showed very high source-drain current after approximately -2 V V-base value. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：2914 / 2919

页数：6

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