Trench DMOS interface trap characterization by three-terminal charge pumping measurement

被引：2

作者：

Izuddin, I. ^{[1
]}

Kamaruddin, M. H. ^{[2
]}

Nordin, A. N. ^{[1
]}

Soin, N. ^{[3
]}

机构：

[1] Int Islamic Univ Malaysia, Kuala Lumpur 53100, Malaysia

[2] Infineon Technol Kulim Sdn Bhd, Kulim 09000, Kedah, Malaysia

[3] Univ Malaya, Dept Elect Engn, Kuala Lumpur 50603, Malaysia

来源：

MICROELECTRONICS RELIABILITY | 2012年 / 52卷 / 12期

关键词：

OXIDE; TRANSISTORS;

D O I：

10.1016/j.microrel.2012.06.118

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The applicability of three-terminal charge pumping (3T-CP) technique to characterize the gate-oxide/Silicon (SiO2/Si) interface in a 45 nm thick SiO2, n-type trench Double-diffused Metal-Oxide-Semiconductor (DMOS) technology transistors is studied. The charge pumping current for process control monitor kerf (PCM-Kerf) structures were successfully measured during experiments. The plot shapes and trends are in agreement with previously reported work. A correlation study was performed with the numerical value of charge pumping current and experimental results on PCM-Kerf for a planar DMOS with 4 terminals. The charge pumping measurements showed very high source-drain current after approximately -2 V V-base value. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：2914 / 2919

页数：6

共 20 条

[1] Charge Pumping revisited - the benefits of an optimized constant base level charge pumping technique for MOS-FET analysis [J].

Aichinger, T. ;

Nelhiebel, M. .

2007 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 2007, :63-69

[2] Advanced Energetic and Lateral Sensitive Charge Pumping Profiling Methods for MOSFET Device Characterization-Analytical Discussion and Case Studies [J].

Aichinger, Thomas ;

Nelhiebel, Michael .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2008, 8 (03) :509-518

[3] CHARGE PUMPING IN MOS DEVICES [J].

BRUGLER, JS ;

JESPERS, PGA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (03) :297-+

[4] A new charge-pumping technique for profiling the interface-states and oxide-trapped charges in MOSFET's [J].

Chu, YL ;

Lin, DW ;

Wu, CY .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (02) :348-353

[5]

Dyer T, 2005, INT SYM POW SEMICOND, P47

[6]

Forster C, 2007, S FET4 30V L8900 L89

[7]

Goldberg CK, 2003, INTERLAYER DIELECTRI

[8] A RELIABLE APPROACH TO CHARGE-PUMPING MEASUREMENTS IN MOS-TRANSISTORS [J].

GROESENEKEN, G ;

MAES, HE ;

BELTRAN, N ;

DEKEERSMAECKER, RF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) :42-53

[9] ANALYSIS OF THE CHARGE PUMPING TECHNIQUE AND ITS APPLICATION FOR THE EVALUATION OF MOSFET DEGRADATION [J].

HEREMANS, P ;

WITTERS, J ;

GROESENEKEN, G ;

MAES, HE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (07) :1318-1335

[10]

JEDEC/FSA joint publication, 2002, FOUNDR PROC QUAL GUI

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