Approximation of crystallite size and microstrain via XRD line broadening analysis in TiSiN thin films

被引:151
作者
Bushroa, A. R. [1 ,2 ]
Rahbari, R. G. [2 ,3 ]
Masjuki, H. H. [4 ]
Muhamad, M. R. [3 ]
机构
[1] Univ Malaya, Dept Engn Design & Manufacture, Fac Engn, Kuala Lumpur 50603, Malaysia
[2] Univ Malaya, Ctr Adv Mfg & Mat Proc, Kuala Lumpur 50603, Malaysia
[3] Univ Malaya, Dept Phys, Fac Sci, Kuala Lumpur 50603, Malaysia
[4] Univ Malaya, Dept Mech Engn, Fac Engn, Kuala Lumpur 50603, Malaysia
关键词
Approximation method; Size-strain analysis; XRD; Thin films; TiSiN; RESIDUAL-STRESS; STRAIN;
D O I
10.1016/j.vacuum.2011.10.011
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In the present work, an approximation method was used to determine both the crystallite size and microstrain from XRD profile of TiSiN thin film deposited on high speed steel substrates. The estimated crystallite size obtained via this approximation method was in good agreement with the resulting microstructure observation using the scanning electron microscope (SEM). The approximation method was used to determine microstrain, and its corresponding compressive stress was related to the result of scratch adhesion measurement of the TiSiN thin film. Comparison of crystallite size and microstrain were investigated using different definitions of line broadening, beta. The approximation method was found to be useful in cases when crystallite size and microstrain contributed in the line broadening simultaneously. This research demonstrated the reliability of using the approximation method in determining the resulting crystallite size and microstrain from the XRD line broadening analysis in the TiSiN thin films. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1107 / 1112
页数:6
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