Electronic states of interface Al-2p core excitons in GaAs/AlAs/GaAs heterostructures

被引：0

作者：

Inoue, K ^{[1
]}

Ishiwata, Y ^{[1
]}

Shin, S ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

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D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electronic states of Al-2p core excitons in the GaAs/AlAs/GaAs heterostructures are calculated by a finite element method in an effective mass approximation. Localized exciton states at the interface due to the valley mixing are found below the X-point core exciton energy.

引用

页码：573 / 574

页数：2

共 5 条

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