Formation of distorted rutile-type NbO2, MoO2, and WO2 films by reactive sputtering

被引：16

作者：

Fujiwara, Kohei ^{[1
]}

Tsukazaki, Atsushi ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2019年 / 125卷 / 08期

关键词：

THIN-FILMS; INSULATOR-TRANSITION; OXIDES; TUNGSTEN; SPECTRA; XPS;

D O I：

10.1063/1.5079719

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the film growth of distorted rutile-type NbO2 (4d(1) system), MoO2 (4d(2)), and WO2 (5d(2)) by radio-frequency (RF) magnetron reactive sputtering. Through optimization of growth conditions for the three oxides on Al2O3(0001), we found that the increase/decrease in the RF power had an equivalent role to that of the decrease/increase in the oxygen ratio in the Ar-O-2 sputtering gas. X-ray photoelectron spectroscopy supported the d(1) electronic configuration of NbO2 and d(2) electronic configurations of MoO2 and WO2. An electrical transport measurement confirmed that NbO2 was insulating, while MoO2 and WO2 were metallic, consistent with the d-electron filling in the molecular orbital bonding band. The growth scheme presented in this study will be useful for valence control in various oxide thin films with a simple sputtering technique. Published under license by AIP Publishing.

引用

页数：5

共 38 条

[1] Electrical properties of reactively sputtered WO3 thin films as ozone gas sensor [J].