Controlling Chain Conformations of High-k Fluoropolymer Dielectrics to Enhance Charge Mobilities in Rubrene Single-Crystal Field-Effect Transistors

被引：40
作者：
Adhikari, Jwala M. [1 ,2 ]
Gadinski, Matthew R. [3 ]
Li, Qi [3 ]
Sun, Kaige G. [4 ]
Reyes-Martinez, Marcos A. [5 ]
Iagodkine, Elissei
Briseno, Alejandro L. [5 ]
Jackson, Thomas N. [4 ]
Wang, Qing [3 ]
Gomez, Enrique D. [1 ,2 ,5 ]
机构：
[1] Penn State Univ, Dept Chem Engn, University Pk, PA 16802 USA
[2] Penn State Univ, Mat Res Inst, Fenske Lab 106, University Pk, PA 16802 USA
[3] Penn State Univ, Mat Sci & Engn, 348 Millennium Sci Complex, University Pk, PA 16802 USA
[4] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA
[5] Univ Massachusetts Amherst, Dow Chem Co, 455 Forest St, Marlborough, MA 01752 USA
来源：
ADVANCED MATERIALS | 2016年 / 28卷 / 45期
基金：
美国国家科学基金会;
关键词：
THIN-FILM TRANSISTORS; HIGH-ENERGY DENSITY; LOW-VOLTAGE; GATE DIELECTRICS; POLY(VINYLIDENE FLUORIDE); MOLECULAR-MOTION; POLYMER; PERFORMANCE; INSULATORS; TRANSPORT;
D O I：
10.1002/adma.201602873
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A novel photopatternable high-k fluoropolymer, poly(vinylidene fluoride-bromotrifluoroethylene) P(VDF-BTFE), with a dielectric constant (k) between 8 and 11 is demonstrated in thin-film transistors. Crosslinking P(VDF-BTFE) reduces energetic disorder at the dielectric-semiconductor interface by controlling the chain conformations of P(VDF-BTFE), thereby leading to approximately a threefold enhancement in the charge mobility of rubrene single-crystal field-effect transistors.
引用
收藏
页码：10095 / 10102
页数：8
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