Micromanufacturing in Fused Silica via Femtosecond Laser Irradiation Followed by Gas-Phase Chemical Etching

被引:9
|
作者
Venturini, Francesco [1 ]
Sansotera, Maurizio [1 ]
Vazquez, Rebeca Martinez [2 ]
Osellame, Roberto [2 ]
Cerullo, Giulio [2 ]
Navarrini, Walter [1 ,3 ]
机构
[1] Politecn Milan, Dipartimento Chim Mat & Ingn Chim Giulio Natta, I-20133 Milan, Italy
[2] Politecn Milan, Ist Foton & Nanotecnol CNR, Dipartimento Fis, I-20133 Milan, Italy
[3] Consorzio Interuniv Nazl Sci & Tecnol Mat, I-50121 Florence, Italy
来源
MICROMACHINES | 2012年 / 3卷 / 04期
关键词
laser micromachining; FLICE; silicon dioxide; selective etching; anhydrous hydrogen fluoride; MICROFABRICATION;
D O I
10.3390/mi3040604
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Femtosecond laser irradiation followed by chemical etching (FLICE) with hydrogen fluoride (HF) is an emerging technique for the fabrication of directly buried, three-dimensional microfluidic channels in silica. The procedure, as described in literature, consists of irradiating a silica slab followed by chemical etching using hydrogen fluoride. With aqueous HF the etching process is diffusion-limited and is self-terminating, leading to maximum microchannel lengths of about 1.5 mm, while the use of low-pressure gaseous HF etchant can quickly produce 3 mm long channels with an aspect ratio (Length/Diameter) higher than 25. By utilizing this methodology the aspect ratio is not constant, but depends on the length of the channel. When the microchannel is short the aspect ratio increases quickly until it reaches a maximum length at around 1400 mu m. Thereafter the aspect ratio starts to decrease slowly. In this paper we present a variation of the low-pressure gaseous HF etching method, which is based on the dynamic displacement of the etchant. This method results in a 13% increase in the aspect ratio (L/D = 29) at the expense of a low etching speed (4 mu m/min).
引用
收藏
页码:604 / 614
页数:11
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