On the origin of dynamic Ron in commercial GaN-on-Si HEMTs

被引：22

作者：

Karboyan, Serge ^{[1
]}

Uren, Michael J. ^{[1
]}

Manikant ^{[1
]}

Pomeroy, James W. ^{[1
]}

Kuball, Martin ^{[1
]}

机构：

[1] Univ Bristol, HH Wills Phys Lab, Ctr Device Thermog & Reliabil, Bristol BS8 1TL, Avon, England

来源：

MICROELECTRONICS RELIABILITY | 2018年 / 81卷

基金：

英国工程与自然科学研究理事会;

关键词：

Dynamic R-on; Commercial GaN HEMTs; Current collapse; HTRB stress; Leakage path; Buffer design; DOPED ALGAN/GAN;

D O I：

10.1016/j.microrel.2017.10.006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

There are huge differences in dynamic on-resistance R-on, also known as current-collapse, between current GaN power HEMT technologies. Here we illustrate this fact with dynamic R-on measurements on two commercially available devices from 2 different manufacturers, with one showing more than a factor of 2 increase in dynamic Ron after OFF-state drain bias (type 1) and the other one <15% change. HTRB stress for 1000 h and 3000 h on type 1 and type 2 respectively was found to only make subtle changes to dynamic R-on, with type 1 still showing a much larger dynamic R-on than type 2.A model for dynamic R-on, is presented based on a floating, highly resistive, epitaxial buffer whose potential is determined by parasitic leakage paths. The difficulty in controlling local leakage paths can explain the problems that manufacturers are still finding in suppressing dynamic R-on. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：306 / 311

页数：6

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