Effect of electric field on doped amorphous silicon thin films during Ni induced lateral crystallization

被引：5
|
作者：
Ahn, Ji-Su [1 ]
Kim, Deok-kee [1 ]
Joo, Seung-Ki [2 ]
机构：
[1] Sejong Univ, Nano Device Lab, Seoul 143747, South Korea
[2] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea
来源：
MATERIALS LETTERS | 2013年 / 93卷
关键词：
Polycrystalline silicon; Microstructure; MILC; Electric field; Doping; POLY-SI TFTS; POLYCRYSTALLINE SILICON; RECRYSTALLIZATION; PERFORMANCE;
D O I：
10.1016/j.matlet.2012.11.107
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of electric field on the growth and microstructure in doped amorphous silicon thin films during Ni induced lateral crystallization was investigated. With an applied electric field, n- and p-doped samples showed higher growth rate in the cathode and anode directions, respectively. The microstructure of the n- and p-doped samples showed bi-directional needle network and unidirectional-parallel structure, respectively. The reversal of the electric field effect in p-type doped sample was explained by employing charged vacancy migration. p-doped sample under an electric field can be useful for poly-Si TFT with its longer length, wider width, and higher growth rate. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：233 / 236
页数：4
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