Eliminating the fine structure splitting of excitons in self-assembled InAs/GaAs quantum dots via combined stresses

被引：32
作者：
Wang, Jianping [1 ]
Gong, Ming [2 ]
Guo, Guang-Can [1 ]
He, Lixin [1 ]
机构：
[1] Univ Sci & Technol China, Key Lab Quantum Informat, Hefei 230026, Anhui, Peoples R China
[2] Washington State Univ, Dept Phys & Astron, Pullman, WA 99164 USA
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 06期
关键词：
ENTANGLED PHOTON PAIRS; ELECTRONIC-STRUCTURE; FIELD;
D O I：
10.1063/1.4745188
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Eliminating the fine structure splitting (FSS) of excitons in self-assembled quantum dots (QDs) is essential to the generation of high quality entangled photon pairs. It has been shown that the FSS has a lower bound under uniaxial stress. In this letter, we show by a extended two-level model that the FSS of excitons in a general self-assembled InGaAs/GaAs QD can be fully suppressed via combined stresses along the [110] and [010] directions. The results of the model Hamiltonian are confirmed by atomic empirical pseudopotential calculations. For all the QDs we calculated, the FSS can be tuned to be vanishingly small (<0.1 mu eV), which is sufficient small for high quality entangled photon emission. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745188]
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