A 10 GS/s, 3-Bit ADC with Novel Decoder in SiGe BiCMOS Technology

被引:0
作者
Shen, Yu [3 ,4 ]
Zhang, Yi [1 ,2 ,3 ,4 ,5 ]
Yang, Lei [1 ,6 ]
Yang, Yanhui [3 ,4 ]
Guo, Yufeng [1 ,3 ,4 ]
Li, Xiaopeng [1 ,6 ]
Zhang, Youtao [1 ,6 ]
机构
[1] Natl & Local Joint Engn Lab RF Integrat & Microas, Nanjing 210023, Jiangsu, Peoples R China
[2] State Key Lab Millimeter Waves, Nanjing 210096, Jiangsu, Peoples R China
[3] Nanjing Univ Posts & Telecommun, Coll Elect & Opt Engn, Nanjing 210023, Jiangsu, Peoples R China
[4] Nanjing Univ Posts & Telecommun, Coll Microelect, Nanjing 210023, Jiangsu, Peoples R China
[5] JiangSu HengXin Technol Co Ltd, Postdoctoral Res Ctr, Yixing 214222, Peoples R China
[6] Nanjing GB Elect Co Ltd, Nanjing 210016, Jiangsu, Peoples R China
来源
2018 3RD IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM) | 2018年
关键词
flash ADC; SiGe BiCMOS; differential decoder; 10; GS/s;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a design of 10-GS/s, 3-bit analog-to-digital converter in a 0.13 mu m SiGe BiCMOS technology for optical communication application. This fully differential flash ADC includes a wide-bandwidth track-and-hold amplifier, a high-resolution comparator array and a novel differential decoder. By using our novel differential decoder, this ADC design achieves better than 2.8 effective bits for lower input frequencies and 2.5 effective bits for 1 GHz input frequency at a sampling rate of 10 GS/s. This ADC consumes 1.6 W with a 10 GS/s clock rate, while operating from -5/-3.3 V power supplies and its core area is only occupies 1x1.2 mm(2).
引用
收藏
页码:196 / 200
页数:5
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