A (4x2) reconstruction of CuInSe2 (001) studied by low-energy electron diffraction and soft X-ray photoemission spectroscopy -: art. no. 052102

Clean and flat (001) surfaces of CuInSe2/GaAs grown by molecular-beam epitaxy could be prepared by the combination of a Se capping and decapping process and subsequent Ar+ ion sputtering and annealing. The formation of a (4x2) reconstruction was observed with low-energy electron diffraction. Soft x-ray photoemission spectroscopy was performed on the prepared surfaces and revealed surface core-level binding energy shifts in the Cu 2p(3/2), Se 3d, and In 4d levels which are associated with surface atoms. The structure model of a combined metal adatom-Se dimer structure is proposed to refer to the (4x2) reconstruction.(c) 2006 American Institute of Physics.