Continuous-wave operation and differential gain of InGaN/GaN quantum dot ridge waveguide lasers (λ=420 nm) on c-plane GaN substrate

被引：26

作者：

Banerjee, Animesh ^{[1
]}

Frost, Thomas ^{[1
]}

Stark, Ethan ^{[1
]}

Bhattacharya, Pallab ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ctr Photon & Multiscale Nanomat, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 04期

基金：

美国国家科学基金会;

关键词：

III-V semiconductors - Molecular beam epitaxy - Quantum well lasers - Semiconductor quantum dots - Nanocrystals - Continuous wave lasers - Ridge waveguides - Semiconductor quantum wells - Quantum dot lasers;

D O I：

10.1063/1.4738499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The differential gain and coherent output characteristics of blue-emitting In0.18Ga0.82N/GaN quantum dot ridge waveguide lasers have been measured. The laser heterostructures were grown by molecular beam epitaxy. Injected carrier lifetimes in the quantum dots have been measured by temperature dependent and time resolved photoluminescence measurements. The radiative lifetime at 280 K is 480 ps. The threshold current densities at room temperature are 930 and 970 A/cm(2) for pulsed and continuous wave bias operation, respectively. The measured differential gain is 2 x 10(-16) cm(2). The output slope and wall plug efficiency at 1050 A/cm(2) under continuous wave operation are 0.4 W/A and 0.4%, respectively. The measured blue shift in the emission wavelength due to screening of the piezoelectric field with injection is as small as 4.4 nm. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4738499]

引用

页数：4

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