Raman spectroscopy of graphene on different substrates and influence of defects

被引：562

作者：

Das, Anindya ^{[1
]}

Chakraborty, Biswanath ^{[1
]}

Sood, A. K. ^{[1
]}

机构：

[1] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India

来源：

BULLETIN OF MATERIALS SCIENCE | 2008年 / 31卷 / 03期

关键词：

graphene; Raman spectroscopy; nano-carbon; phonons;

D O I：

10.1007/s12034-008-0090-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We show the evolution of Raman spectra with a number of graphene layers on different substrates, SiO2/Si and conducting indium tin oxide (ITO) plate. The G mode peak position and the intensity ratio of G and 2D bands depend on the preparation of sample for the same number of graphene layers. The 2D Raman band has characteristic line shapes in single and bilayer graphene, capturing the differences in their electronic structure. The defects have a significant influence on the G band peak position for the single layer graphene: the frequency shows a blue shift up to 12 cm(-1) depending on the intensity of the D Raman band, which is a marker of the defect density. Most surprisingly, Raman spectra of graphene on the conducting ITO plates show a lowering of the G mode frequency by similar to 6 cm(-1) and the 2D band frequency by similar to 20 cm(-1). This red-shift of the G and 2D bands is observed for the first time in single layer graphene.

引用

页码：579 / 584

页数：6

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