High-efficiency heterojunction solar cells on crystalline germanium substrates

被引：33

作者：

Hekmatshoar, Bahman ^{[1
]}

Shahrjerdi, Davood ^{[1
]}

Hopstaken, Marinus ^{[1
]}

Fogel, Keith ^{[1
]}

Sadana, Devendra K. ^{[1
]}

机构：

[1] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 03期

关键词：

SILICON; SI;

D O I：

10.1063/1.4737166

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report stand-alone heterojunction (HJ) solar cells with conversion efficiencies of 5.9% and 7.2% on n-type and p-type crystalline germanium (c-Ge) substrates, respectively. The emitter of the HJ solar cells is formed by growing thin layers of highly doped hydrogenated microcrystalline silicon using plasma-enhanced chemical vapor deposition at temperatures close to 200 degrees C. The conversion efficiencies of the HJ solar cells are well-comparable with conventional devices fabricated at temperatures as high as 600 degrees C. We also study the surface passivation of c-Ge with hydrogenated amorphous and microcrystalline Si and correlate the passivation quality with the electrical performance of the HJ solar cells. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737166]

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