Electronic transport and Schottky barrier heights of Ni/Au contacts on n-type GaN surface with and without a thin native oxide layer

被引：31

作者：

Lin, YJ ^{[1
]}

Lin, WX

Lee, CT

Chang, HC

机构：

[1] Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan

[2] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan

[3] Feng Chia Univ, Dept Automat Control Engn, Taichung 407, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 4A期

关键词：

gaN; Schottky barrier height; thermionic field emission; thermionic emission; surface treatment;

D O I：

10.1143/JJAP.45.2505

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effects of a thin native oxide layer on Au/Ni/n-type GaN Schottky diodes were investigated in this study. The tunneling current was induced in the presence of native oxides on the GaN surface, making the thermionic emission (TE) theory inapplicable in this case. We find that the value of the barrier height (BH) calculated using the thermionic field emission (TFE) model is similar to that obtained by capacitance-voltage characteristics. This suggested that the discrepancy between BH according to the TFE and TE model for Au/Ni/n-type GaN Schottky diodes could be attributed to the presence of a native oxide layer at the Ni/n-type GaN interface and oxygen-induced and nitrogen-vacancy-related states on the GaN Surfaces. Further, the characteristics of Schottky diodes improved when the n-type GaN was treated with (NH4)(2)S-x solution, an effective agent for removing native oxides and reducing surface states.

引用

页码：2505 / 2508

页数：4

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