Time resolved ultrafast ARPES for the study of topological insulators: The case of Bi2Te3

被引：26

作者：

Hajlaoui, M. ^{[1
]}

Papalazarou, E. ^{[1
]}

Mauchain, J. ^{[1
]}

Jiang, Z. ^{[2
]}

Miotkowski, I. ^{[3
]}

Chen, Y. P. ^{[3
]}

Taleb-Ibrahimi, A. ^{[4
]}

Perfetti, L. ^{[5
]}

Marsi, M. ^{[1
]}

机构：

[1] Univ Paris 11, CNRS, Lab Phys Solides, UMR 8502, F-91405 Orsay, France

[2] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

[3] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA

[4] Synchrotron SOLEIL, F-91192 Gif Sur Yvette, France

[5] Ecole Polytech, CEA, DSM, Lab Solides Irradies,CNRS,UMR 7642, F-91128 Palaiseau, France

来源：

EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS | 2013年 / 222卷 / 05期

关键词：

CHARGE-DENSITY-WAVE; SURFACE; DYNAMICS;

D O I：

10.1140/epjst/e2013-01921-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We discuss the application of time-resolved ultrafast angle resolved photoelectron spectroscopy to the study of photoexcited topological insulators. Measurements performed on the prototype material Bi2Te3 clearly show that all the main processes involved in the ultrafast surface carrier dynamics of topological insulators can be clearly observed and quantitatively analyzed. The comparison with other experimental results shows that the relative position of surface and bulk conduction bands with respect to the system Fermi level play an essential role in the recombination processes following ultrafast optical excitation.

引用

页码：1271 / 1275

页数：5

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