The temperature dependence of the LO(Gamma) and TO(Gamma) phonons in GaAs and InP

被引：87

作者：

Irmer, G

Wenzel, M

Monecke, J

机构：

[1] Institute of Theoretical Physics, University of Mining and Technology, D-09596 Freiberg

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1996年 / 195卷 / 01期

关键词：

D O I：

10.1002/pssb.2221950110

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The LO and TO phonon frequencies and dampings have been measured by near-infrared Raman spectroscopy both in bulk GaAs and InP. The phonon damping of the LO phonon in InP is much smaller than the LO phonon damping in GaAs. The experimentally obtained temperature dependences were compared with a theory including cubic anharmonic processes and the thermal expansion of the lattice. It is shown that the phonon damping is mainly affected by decay processes into acoustic phonons.

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页码：85 / 95

页数：11

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