Interactions of C in layered Mo-Si structures

被引：7
|
作者：
Bosgra, J. [1 ]
Veldhuizen, L. W. [1 ]
Zoethout, E. [1 ]
Verhoeven, J. [2 ]
Loch, R. A. [1 ]
Yakshin, A. E. [1 ]
Bijkerk, F. [1 ,3 ]
机构：
[1] Dutch Inst Fundamental Energy Res, FOM Inst DIFFER, NL-3439 MN Nieuwegein, Netherlands
[2] Leiden Univ, Leiden Inst Phys, Leiden, Netherlands
[3] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands
来源：
THIN SOLID FILMS | 2013年 / 542卷
关键词：
Nanoscale interdiffusion; Thermal stability; Mo/Si multilayer mirror; MO/SI MULTILAYERS; THERMAL-STABILITY; CARBIDE; MIRRORS; DIFFUSION; CONTACTS; GROWTH;
D O I：
10.1016/j.tsf.2013.06.082
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Interdiffusion of a few nanometers thick C layer with Mo and Si under annealing at a temperature of 600 degrees C was studied using X-ray photoelectron spectroscopy sputter depth profiling. A strong diffusion asymmetry of C in a Mo-Si layered structure is observed. C does interdiffuse with Mo, however, even at 600 degrees C, no interdiffusion of Si and C was observed. Based on these results, the thermal stability of Mo/Si-based layer structures was improved by depositing a Si/C/Mo2C/C/Si layer structure. This structure shows superior thermal stability at 600 degrees C compared to the Mo2C/Si and Mo/Si layer structure. (C) 2013 The Authors. Published by Elsevier B.V. All rights reserved.
引用
收藏
页码：210 / 213
页数：4
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