Silicon Oxynitride Ceramics Prepared by Plasma Activated Sintering of Nanosized Amorphous Silicon Nitride Powder without Additives

被引:9
|
作者
Fan, Lei [1 ]
Shi, Zhongqi [1 ]
Lu, Xuefeng [1 ]
Wang, Chao [1 ]
Chen, Meng [1 ]
Li, Yawen [2 ]
Wang, Hongjie [1 ]
机构
[1] Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Shannxi, Peoples R China
[2] Lawrence Technol Univ, Coll Engn, Southfield, MI 48075 USA
基金
中国国家自然科学基金;
关键词
CRYSTALLIZATION; BEHAVIOR;
D O I
10.1111/jace.12463
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Si2N2O ceramics were prepared by plasma activated sintering using nanosized amorphous Si3N4 powder without sintering additives within a temperature range of 1400 degrees C-1600 degrees C in vacuum. A mixed Si-N4-n-O-n (n=0, 1...4) amorphous structure was formed in the process of sintering, and Si2N2O crystals were nucleated where the local structure was similar with Si2N2O. After sintering at 1600 degrees C, the Si2N2O ceramic was composed of elongated plate-like Si2N2O grains and amorphous phase. The Si2N2O grains showed a width of less than 100nm and a very high aspect ratio.
引用
收藏
页码:2358 / 2361
页数:4
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