Photoluminescence properties of highly excited CdSe quantum dots

被引:6
作者
Ando, M
Inagaki, TJ
Kanemitsu, Y
Kushida, T
Maehashi, K
Murase, Y
Ota, T
Nakashima, H
机构
[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan
[2] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan
关键词
excitons; high-density excitation; CdSe quantum dot;
D O I
10.1016/S0022-2313(01)00313-1
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Many-body effects were studied in highly photoexcited CdSe quantum dots (QDs). The size of the QDs was larger than the exciton Bohr radius in bulk CdSe crystals, so that the excitons are confined in the CdSe QDs. With increasing excitation density, the photoluminescence (PL) intensity increased linearly and was then saturated. In the intensity saturation regime, the blueshift and the broadening of the PL spectrum were observed. From a theoretical analysis including both exciton-exciton and carrier-carrier interactions, it was concluded that the PL intensity saturation originates from the deformation of the exciton wave function due to the quasi-Fermi-level generation. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:403 / 406
页数:4
相关论文
共 9 条
[1]   Many-body effects on the optical spectra of InAs/GaAs quantum dots [J].
Heitz, R ;
Guffarth, F ;
Mukhametzhanov, I ;
Grundmann, M ;
Madhukar, A ;
Bimberg, D .
PHYSICAL REVIEW B, 2000, 62 (24) :16881-16885
[2]   Theory of the luminescence spectra of high-density electron-hole systems: crossover from excitonic Bose-Einstein condensation to electron-hole BCS state [J].
Inagaki, TJ ;
Aihara, M ;
Takahashi, A .
SOLID STATE COMMUNICATIONS, 2000, 115 (12) :645-650
[3]   Formation and characterization of self-organized CdSe quantum dots [J].
Maehashi, K ;
Yasui, N ;
Murase, Y ;
Ota, T ;
Noma, T ;
Nakashima, H .
JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (05) :542-548
[4]   Experimental determination of Auger capture coefficients in self-assembled quantum dots [J].
Raymond, S ;
Hinzer, K ;
Fafard, S ;
Merz, JL .
PHYSICAL REVIEW B, 2000, 61 (24) :R16331-R16334
[5]   State filling and time-resolved photoluminescence of excited states in InxGa1-xAs/GaAs self-assembled quantum dots [J].
Raymond, S ;
Fafard, S ;
Poole, PJ ;
Wojs, A ;
Hawrylak, P ;
Charbonneau, S ;
Leonard, D ;
Leon, R ;
Petroff, PM ;
Merz, JL .
PHYSICAL REVIEW B, 1996, 54 (16) :11548-11554
[6]   Quantum dot exciton dynamics through a nanoaperture: Evidence for two confined states [J].
Robinson, LM ;
Rho, H ;
Kim, JC ;
Jackson, HE ;
Smith, LM ;
Lee, S ;
Dobrowolska, M ;
Furdyna, JK .
PHYSICAL REVIEW LETTERS, 1999, 83 (14) :2797-2800
[7]   THEORY OF THE LINEAR AND NONLINEAR OPTICAL-PROPERTIES OF SEMICONDUCTOR MICROCRYSTALLITES [J].
SCHMITTRINK, S ;
MILLER, DAB ;
CHEMLA, DS .
PHYSICAL REVIEW B, 1987, 35 (15) :8113-8125
[8]   Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix [J].
Strassburg, M ;
Kutzer, V ;
Pohl, UW ;
Hoffmann, A ;
Broser, I ;
Ledentsov, NN ;
Bimberg, D ;
Rosenauer, A ;
Fischer, U ;
Gerthsen, D ;
Krestnikov, IL ;
Maximov, MV ;
Kop'ev, PS ;
Alferov, ZI .
APPLIED PHYSICS LETTERS, 1998, 72 (08) :942-944
[9]   Formation of self-assembling CdSe quantum dots on ZnSe by molecular beam epitaxy [J].
Xin, SH ;
Wang, PD ;
Yin, A ;
Kim, C ;
Dobrowolska, M ;
Merz, JL ;
Furdyna, JK .
APPLIED PHYSICS LETTERS, 1996, 69 (25) :3884-3886