Analysis of point heating time in VLSI circuits

被引：0

作者：

Mikula, S. ^{[1
]}

Kos, A. ^{[1
]}

机构：

[1] AGH Univ Sci & Technol, Dept Elect, Krakow, Poland

来源：

MIXDES 2008: PROCEEDINGS OF THE 15TH INTERNATIONAL CONFERENCE ON MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 2008年

关键词：

temperature; dynamic heating; VLSI systems; point heating time;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper presents results of a point heating time (PHT) analysis for integrated circuits. The point heating time is a time of temperature rise in any point of a circuit board, which is caused by a heat source freely placed on the chip. Authors present simulation results for calculation of the Point Heating Time for different materials and physical conditions of the integrated circuit. The method for obtaining the Point Heating Time value is presented with approximation of the RC electric model. Simulation results and a comparison with analytical values are presented for two scenarios: an active cooling and a heating of the chip. Analysis of Point Heating Time values based on a geometrical displacement of functional modules, which are equivalent to the heating source, are presented in the last section. PHT values are presented in a comparison with a distance from the heat source. Results are used to approximate polynomial function with a curve fitting method. The polynomal characteristic is going to be used with all asynchronous control of activity modules in the multicore processor model.

引用

页码：311 / 316

页数：6

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