A Novel Silicon-Embedded Toroidal Power Inductor With Magnetic Core

被引：24

作者：

Fang, Xiangming ^{[1
]}

Wu, Rongxiang ^{[2
]}

Peng, Lulu ^{[1
]}

Sin, Johnny K. O. ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China

[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 02期

关键词：

DC-DC power conversion; integrated inductor; monolithic inductors; power supply-on-a-chip (PowerSoC); MICRO-INDUCTORS;

D O I：

10.1109/LED.2012.2234077

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a novel post-CMOS silicon-embedded toroidal power inductor with an MnZn ferrite composite core is proposed and demonstrated. The inductor is accommodated within the groove at the backside of a Si chip and connected to the front-side IC through vias for area saving, electromagnetic interference suppression, and large power-handling capability. A 2.9-mm(2) embedded inductor with an inductance of 43.6 nH and a peak Q-factor of 16.2 is fabricated. It achieves a saturation current of 10 A, making it promising for on-chip light-emitting diode driver applications.

引用

页码：292 / 294

页数：3