A Novel Silicon-Embedded Toroidal Power Inductor With Magnetic Core

被引：24
作者：
Fang, Xiangming [1 ]
Wu, Rongxiang [2 ]
Peng, Lulu [1 ]
Sin, Johnny K. O. [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China
[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 02期
关键词：
DC-DC power conversion; integrated inductor; monolithic inductors; power supply-on-a-chip (PowerSoC); MICRO-INDUCTORS;
D O I：
10.1109/LED.2012.2234077
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, a novel post-CMOS silicon-embedded toroidal power inductor with an MnZn ferrite composite core is proposed and demonstrated. The inductor is accommodated within the groove at the backside of a Si chip and connected to the front-side IC through vias for area saving, electromagnetic interference suppression, and large power-handling capability. A 2.9-mm(2) embedded inductor with an inductance of 43.6 nH and a peak Q-factor of 16.2 is fabricated. It achieves a saturation current of 10 A, making it promising for on-chip light-emitting diode driver applications.
引用
收藏
页码：292 / 294
页数：3
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