Control of Goos-Hanchen Shift Based on Graphene/Hexagonal Boron Nitride Heterostructure

In this study, the transfer matrix method is used to enhance and regulate Goos-Hanchen (GH) shift based on graphene/hexagonal boron nitride (hBN) heterostructure in the infrared band. Theoretical research demonstrates that when the transverse magnetic polarized light with 12. 20 mu m wavelength is incident, hEN heterostructure GH shift can be effectively improved by adjusting the Fermi level of graphene or the number of graphene layer. This phenomenon is attributed to the Lorentz resonance phenomenon in the infrared band of hHN. For 0. 2 eV Fermi energy, GH shift of 80. 97 lambda can be achieved using a single layer of graphene as the heterostructure. Moreover, the law of GH shift varying with the hEN thickness exhibits the same as that with the hEN dielectric constant. Notably, when the hBN thickness changes around 1. 53 mu m, the positive and negative variations in GH shift can be flexibly switched in the range of - 150 lambda-150 lambda. Furthermore, these findings arc helpful in designing new high-sensitivity infrared optical sensors.