Ordinary dielectric function of corundumlike α-Ga2O3 from 40 meV to 20 eV

被引：27

作者：

Feneberg, Martin ^{[1
]}

Nixdorf, Jakob ^{[1
]}

Neumann, Maciej D. ^{[2
]}

Esser, Norbert ^{[2
]}

Artus, Lluis ^{[3
]}

Cusco, Ramon ^{[3
]}

Yamaguchi, Tomohiro ^{[4
]}

Goldhahn, Ruediger ^{[5
]}

机构：

[1] Otto von Guericke Univ, Inst Expt Phys, Univ Pl 2, D-39106 Magdeburg, Germany

[2] Leibniz Inst Analyt Wissensch ISAS eV, Schwarzschildstr 8, D-12489 Berlin, Germany

[3] CSIC, Inst Jaume Almera ICTJA, E-08028 Barcelona, Spain

[4] Kogakuin Univ, Grad Sch Engn, Dept Elect Engn & Elect, 2665-1 Nakano, Hachioji, Tokyo 1920015, Japan

[5] Otto von Guericke Univ, Inst Expt Phys, Univ Pl 2, D-39106 Magdeburg, Germany

来源：

PHYSICAL REVIEW MATERIALS | 2018年 / 2卷 / 04期

关键词：

BETA-GA2O3; SINGLE-CRYSTALS; GENERALIZED ELLIPSOMETRY; GROWTH; FILMS; CONDUCTIVITY; ANISOTROPY; CONSTANTS; TENSOR; MODES; PHASE;

D O I：

10.1103/PhysRevMaterials.2.044601

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The linear optical response of metastable alpha-Ga2O3 is investigated by spectroscopic ellipsometry. We determine the ordinary dielectric function from lattice vibrations up to the vacuum ultraviolet spectral range at room temperature for a sample with a (0001) surface. Three out of four E-u infrared-active phonon modes are unambiguously determined, and their frequencies are in good agreement with density functional theory calculations. The dispersion of the refractive index in the visible and ultraviolet part of the spectrum is determined. High-energy interband transitions are characterized up to 20 eV. By comparison with the optical response of alpha-Al2O3 and with theoretical results, a tentative assignment of interband transitions is proposed.

引用

页数：7

共 71 条

[1] Electrical Conductive Corundum-Structured α-Ga2O3 Thin Films on Sapphire with Tin-Doping Grown by Spray-Assisted Mist Chemical Vapor Deposition [J].