Specific and label-free immunosensing of protein-protein interactions with silicon-based immunoFETs

被引:48
作者
Bhattacharyya, Ie Mei [1 ]
Cohen, Shira [2 ]
Shalabny, Awad [3 ]
Bashouti, Muhammad [3 ,4 ]
Akabayov, Barak [2 ]
Shalev, Gil [1 ,4 ]
机构
[1] Ben Gurion Univ Negev, Dept Elect & Comp Engn, POB 653, IL-8410501 Beer Sheva, Israel
[2] Ben Gurion Univ Negev, Dept Chem, POB 653, IL-8410501 Beer Sheva, Israel
[3] Ben Gurion Univ Negev, Jacob Blaustein Inst Desert Res, Seder Boqer Campus, IL-8499000 Sede Boqer, Israel
[4] Ben Gurion Univ Negev, Ilse Katz Inst Nanoscale Sci & Technol, POB 653, IL-8410501 Beer Sheva, Israel
关键词
ImmunoFET; Label-free; Specific; Immunosensing; Protein-protein interactions; ISFET; pH sensitivity; FIELD-EFFECT TRANSISTOR; SENSING MEMBRANE; FET BIOSENSOR; TUMOR-MARKER; SURFACE; ION; SENSITIVITY; NOISE; PERFORMANCE; SENSORS;
D O I
10.1016/j.bios.2019.03.003
中图分类号
Q6 [生物物理学];
学科分类号
071011 ;
摘要
The importance of specific and label-free detection of proteins via antigen-antibody interactions for the development of point-of-care testing devices has greatly influenced the search for a more accessible, sensitive, low cost and robust sensors. The vision of silicon field-effect transistor (FET)-based sensors has been an attractive venue for addressing the challenge as it potentially offers a natural path to incorporate sensors with the existing mature Complementary Metal Oxide Semiconductor (CMOS) industry; this provides a stable and reliable technology, low cost for potential disposable devices, the potential for extreme minituarization, low electronic noise levels, etc. In the current review we focus on silicon-based immunological FET (ImmunoFET) for specific and label-free sensing of proteins through antigen-antibody interactions that can potentially be incorporated into the CMOS industry; hence, immunoFETs based on nano devices (nanowire, nanobelts, carbon nanotube, etc.) are not treated here. The first part of the review provides an overview of immunoFET principles of operation and challenges involved with the realization of such devices (i.e. e.g. Debye length, surface ftmctionalization, noise, etc.). In the second part we provide an overview of the state-of-the-art silicon-based immunoFET structures and novelty, principles of operation and sensing performance reported to date.
引用
收藏
页码:143 / 161
页数:19
相关论文
共 144 条
[1]   ISFETS USING INORGANIC GATE THIN-FILMS [J].
ABE, H ;
ESASHI, M ;
MATSUO, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (12) :1939-1944
[2]   High Performance of Silicon Nanowire-Based Biosensors using a High-k Stacked Sensing Thin Film [J].
Bae, Tae-Eon ;
Jang, Hyun-June ;
Yang, Jong-Heon ;
Cho, Won-Ju .
ACS APPLIED MATERIALS & INTERFACES, 2013, 5 (11) :5214-5218
[3]   A charge-modulated FET for detection of biomolecular processes: Conception, modeling, and simulation [J].
Barbaro, M ;
Bonfiglio, A ;
Raffo, L .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (01) :158-166
[4]  
Bard A. J, 2001, MOL BIOL, DOI [10.1016/B978-0-08-098353-0.00003-8, DOI 10.1016/B978-0-08-098353-0.00003-8]
[5]   Tuning the Electrical Properties of Si Nanowire Field-Effect Transistors by Molecular Engineering [J].
Bashouti, Muhammad Y. ;
Tung, Raymond T. ;
Haick, Hossam .
SMALL, 2009, 5 (23) :2761-2769
[6]   Thirty years of ISFETOLOGY - What happened in the past 30 years and what may happen in the next 30 years [J].
Bergveld, P .
SENSORS AND ACTUATORS B-CHEMICAL, 2003, 88 (01) :1-20
[8]   CHEMICAL-SENSITIVITY OF AN ISFET WITH TA2O5 MEMBRANE IN STRONG ACID AND ALKALINE-SOLUTIONS [J].
BOBROV, PV ;
TARANTOV, YA ;
KRAUSE, S ;
MORITZ, W .
SENSORS AND ACTUATORS B-CHEMICAL, 1991, 3 (01) :75-81
[9]   Directed evolution of antibody fragments with monovalent femtomolar antigen-binding affinity [J].
Boder, ET ;
Midelfort, KS ;
Wittrup, KD .
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2000, 97 (20) :10701-10705
[10]   HYSTERESIS IN AL2O3-GATE ISFETS [J].
BOUSSE, L ;
VANDENVLEKKERT, HH ;
DEROOIJ, NF .
SENSORS AND ACTUATORS B-CHEMICAL, 1990, 2 (02) :103-110