Universal Quantum Criticality at the Mott-Anderson Transition

被引：23

作者：

Aguiar, M. C. O. ^{[1
]}

Dobrosavljevic, V. ^{[2
,3
]}

机构：

[1] Univ Fed Minas Gerais, Dept Fis, BR-31270901 Belo Horizonte, MG, Brazil

[2] Florida State Univ, Dept Phys, Tallahassee, FL 32306 USA

[3] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32306 USA

来源：

PHYSICAL REVIEW LETTERS | 2013年 / 110卷 / 06期

基金：

美国国家科学基金会;

关键词：

MEAN-FIELD THEORY; ELECTRONIC SYSTEMS; DIMENSIONS; INSULATOR;

D O I：

10.1103/PhysRevLett.110.066401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present a large N solution of a microscopic model describing the Mott-Anderson transition on a finite-coordination Bethe lattice. Our results demonstrate that strong spatial fluctuations, due to Anderson localization effects, dramatically modify the quantum critical behavior near disordered Mott transitions. The leading critical behavior of quasiparticle wave functions is shown to assume a universal form in the full range from weak to strong disorder, in contrast to disorder-driven non-Fermi liquid ("electronic Griffiths phase") behavior, which is found only in the strongly correlated regime. DOI: 10.1103/PhysRevLett.110.066401

引用

页数：5

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