Efficiency droop improvement in InGaN light-emitting diodes with graded InGaN barriers of increasing indium composition

被引：7

作者：

Cheng, Liwen ^{[1
]}

Wu, Shudong

Xia, Changquan

Chen, Haitao

机构：

[1] Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 118卷 / 10期

基金：

中国国家自然科学基金;

关键词：

SEMICONDUCTORS;

D O I：

10.1063/1.4930155

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, graded barrier InGaN light-emitting diodes with increasing indium composition barriers are proposed and investigated numerically. When the conventional GaN barriers are replaced by this unique graded InGaN barrier design, the forward voltage at 100mA is reduced from 3.32V to 3.27 V, and the efficiency droop is improved from 46.6% to 7.5%. The simulation results observed in this work indicate that these improvements can be attributed to increased electron confinement and enhanced hole injection efficiency caused by the modified energy band diagram. (C) 2015 AIP Publishing LLC.

引用

页数：5

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