Hydrogen Distribution and Electronic Structure of TiO2(110) Hydrogenated with Low-Energy Hydrogen Ions

被引：16

作者：

Ohashi, Yuki ^{[1
]}

Nagatsuka, Naoki ^{[1
]}

Ogura, Shohei ^{[1
]}

Fukutani, Katsuyuki ^{[1
,2
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, 4-6-1 Komaba, Tokyo 1538505, Japan

[2] JAEA, Adv Sci Res Ctr, Tokai, Ibaraki 3191195, Japan

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2019年 / 123卷 / 16期

关键词：

RUTILE TIO2(110); BAND-GAP; TIO2; SURFACE; DEFECTS; PHOTOCATALYSIS; ADSORPTION; DIFFUSION; BEHAVIOR; SITES;

D O I：

10.1021/acs.jpcc.8b09434

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The rutile TiO2 surface irradiated by hydrogen ions at 0.5 keV was investigated by ultraviolet photoemission spectroscopy, X-ray photoemission spectroscopy, and nuclear reaction analysis. With hydrogen irradiation, an in-gap state (IGS) was formed at similar to 0.8 eV below the Fermi level, and the bands were downward bent by 0.5 eV. The H depth profile showed a maximum at about 1 nm, extending to similar to 30 nm with an average concentration of 5.6 at. %. Upon annealing at 673 K, the IGS intensity was reduced and H with a coverage of 1.4 monolayer remained in the near-surface region, suggesting stable H occupation of subsurface sites. After an O-2 dose to the H-irradiated surface, although the IGS intensity was substantially reduced, the hydrogen distribution was found to be unchanged.

引用

页码：10319 / 10324

页数：6

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