Low noise radio frequency integrated circuits in 90 nm SOICMOS up to 60 GHz

被引：0

作者：

Ellinger, F. ^{[1
]}

Wickert, M. ^{[1
]}

Eickhoff, R. ^{[1
]}

Mayer, U. ^{[1
]}

Hauptmann, S. ^{[1
]}

机构：

[1] Tech Univ Dresden, Chair Circuit Design & Network Theory, D-01062 Dresden, Germany

来源：

2008 IEEE INTERNATIONAL CONFERENCE ON MICROWAVES, COMMUNICATIONS, ANTENNAS AND ELECTRONIC SYSTEMS | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：155 / 160

页数：6

共 15 条

[1]

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[3] 30-40-GHz drain-pumped passive-mixer MMIC fabricated on VLSI SOICMOS technology [J].

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[4] 26-42 GHz SOICMOS low noise amplifier [J].

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[8] A low-voltage 40-GHz complementary VCO with 15% frequency tuning range in SOOCMOS technology [J].

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[9]

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[10]

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