A 10-Gb/s inductorless optical receiver in 0.18-μm SiGe BiCMOS

被引：5
|
作者：
Xue, Zhe [1 ]
He, Jin [1 ]
Fang, Ya [1 ]
Wang, Hao [1 ]
Chang, Sheng [1 ]
Huang, Qijun [1 ]
Zhu, Yinxia [2 ]
机构：
[1] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China
[2] Army Engn Univ PLA, Coll Commun Engn, Nanjing 210001, Jiangsu, Peoples R China
来源：
MICROELECTRONICS JOURNAL | 2019年 / 86卷
基金：
中国博士后科学基金;
关键词：
Optical receiver; Transimpedance amplifier (TIA); AGC; DC offset cancellation; SiGe BiCMOS; TRANSIMPEDANCE AMPLIFIER; BANDWIDTH;
D O I：
10.1016/j.mejo.2019.02.010
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 10-Gb/s inductorless optical receiver featuring linear characteristic has been designed and implemented using a 0.18-mu m SiGe BiCMOS process. As the input stage of the proposed optical receiver, a transimpedance amplifier (TIA) of a common-emitter and common-collector topology with a feedback resistor incorporates DC offset cancellation (DOC) and automatic gain control (AGC) to improve the linearity and broaden the input dynamic range. Followed by a post amplifier and a 50-Omega output buffer, the measured input sensitivity, overload, and dynamic range of the optical receiver are respectively -19.3 dBm, -4 dBm, and 15.3 dB for a bit-error rate of 10(-12) at 10 Gb/s. The whole receiver draws a total current of 24 mA from a 3.3 V supply and the chip has an area of 826 mu m x 957 mu m.
引用
收藏
页码：34 / 39
页数：6
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