Annealing Temperature Dependent Structural and Optical Properties of RF Sputtered ZnO Thin Films

This work investigates the effect of annealing temperature on structural and optical properties of ZnO thin films grown over Si < 100 > and glass substrates using RF sputtering technique. Annealing temperature has been varied from 300 degrees C to 600 degrees C in steps of 100, and different microstructural parameters such as grain size, dislocation density, lattice constant, stress and strain have been evaluated. The structural and surface morphological characterization has been done using X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM). XRD analysis reveals that the peak intensity of < 002 > crystallographic orientation increases with increased annealing temperature. Optical characterization of deposited films have been done using UV-Vis-NIR spectroscopy and photoluminescence spectrometer. An increase in optical bandgap of deposited ZnO thin films with increasing annealing temperature has been observed. The average optical transmittance was found to be more than 85% for all deposited films. Photoluminiscense spectra (PL) suggest that the crystalline quality of deposited film has increased at higher annealing temperature.