Neutron irradiation effects on gallium nitride-based Schottky diodes

被引：21

作者：

Lin, Chung-Han ^{[1
]}

Katz, Evan J. ^{[1
]}

Qiu, Jie ^{[2
]}

Zhang, Zhichun ^{[1
]}

Mishra, Umesh K. ^{[3
,4
]}

Cao, Lei ^{[2
]}

Brillson, Leonard J. ^{[1
,5
,6
]}

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[2] Ohio State Univ, Dept Mech & Aerosp Engn, Nucl Engn Program, Columbus, OH 43210 USA

[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[4] Univ Calif Santa Barbara, Dept Mat Sci & Engn, Santa Barbara, CA 93106 USA

[5] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA

[6] Ohio State Univ, Ctr Mat Res, Columbus, OH 43210 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 16期

关键词：

GAN; DEFECT; PHOTOLUMINESCENCE; LUMINESCENCE; TRANSIENTS; TRAPS; FILMS; DC;

D O I：

10.1063/1.4826091

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Depth-resolved cathodoluminescence spectroscopy (DRCLS), time-resolved surface photovoltage spectroscopy, X-ray photoemission spectroscopy (XPS), and current-voltage measurements together show that fast versus thermal neutrons differ strongly in their electronic and morphological effects on metal-GaN Schottky diodes. Fast and thermal neutrons introduce GaN displacement damage and native point defects, while thermal neutrons also drive metallurgical reactions at metal/GaN interfaces. Defect densities exhibit a threshold neutron fluence below which thermal neutrons preferentially heal versus create new native point defects. Scanning XPS and DRCLS reveal strong fluence- and metal-dependent electronic and chemical changes near the free surface and metal interfaces that impact diode properties. (C) 2013 AIP Publishing LLC.

引用

页数：5

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