High Temperature AlGaN/GaN HFET Microwave Characterization

被引：0
|
作者：
Tomaska, Martin [1 ]
机构：
[1] Slovak Univ Technol Bratislava, Inst Elect & Photon, Bratislava 81219, Slovakia
来源：
NINTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS | 2012年
关键词：
PERFORMANCE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper reports high temperature on-wafer microwave characterization setup for AlGaN/GaN HEMT devices. DC output characteristics as well as microwave parameters f(T) and f(max) were measured and visualized in the form of 3-D diagrams in the temperature range from room temperature up to 425 degrees C. Significant influence of temperature on DC and microwave properties was observed.
引用
收藏
页码：27 / 30
页数：4
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